Part Number Hot Search : 
RBV1006D 3101E DMA20101 AM29LV64 A54E3 ACS714 R3540PF U20C60
Product Description
Full Text Search

MRF19125 - RF Power Field Effect Transistors

MRF19125_4304575.PDF Datasheet

 
Part No. MRF19125 MRF19125R3 MRF19125SR3
Description RF Power Field Effect Transistors

File Size 411.36K  /  12 Page  

Maker


Freescale Semiconductor, Inc



JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: MRF19125
Maker: MOTOROLA
Pack: 高频管
Stock: 112
Unit price for :
    50: $35.45
  100: $33.67
1000: $31.90

Email: oulindz@gmail.com

Contact us

Homepage http://www.freescale.com
Download [ ]
[ MRF19125 MRF19125R3 MRF19125SR3 Datasheet PDF Downlaod from Datasheet.HK ]
[MRF19125 MRF19125R3 MRF19125SR3 Datasheet PDF Downlaod from Maxim4U.com ] :-)


[ View it Online ]   [ Search more for MRF19125 ]

[ Price & Availability of MRF19125 by FindChips.com ]

 Full text search : RF Power Field Effect Transistors


 Related Part Number
PART Description Maker
RFH35N10 RFH35N08 POWER MOS FIELD - EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS
List of Unclassifed Manufacturers
ETC[ETC]
RFK35N10 RFK35N08 POWER MOS FIELD - EFFECT TRANSISTORS, N - CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS
List of Unclassifed Manufacturers
ETC[ETC]
IRFF110 IRFF111 IRFF112 IRFF113 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A.
Power MOS Field-Effect Transistors
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A.
General Electric Solid State
GE Solid State
PTF080601F PTF080601E PTF080601A PTF080601 LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦,860-960兆赫
LDMOS RF Power Field Effect Transistor 60 W 860-960 MHz
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
INFINEON[Infineon Technologies AG]
PTF181301 PTF181301A LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz LDMOS射频功率场效应晶体管130瓦,1805年至1880年兆
LDMOS RF Power Field Effect Transistor 130 W/ 1805-1880 MHz
INFINEON[Infineon Technologies AG]
MRF21125 MRF21125R3 MRF21125SR3 RF Power Field Effect Transistors
Freescale Semiconductor, Inc
MRF19125 MRF19125R3 MRF19125SR3 RF Power Field Effect Transistors
Freescale Semiconductor, Inc
MRF141 RF FIELD-EFFECT POWER TRANSISTOR
Advanced Semiconductor
MRF8S8260HR3 MRF8S8260HSR3 RF Power Field Effect Transistors
Freescale Semiconductor, Inc
MRF8S18210WHS MRF8S18210WGHSR3 MRF8S18210WHSR3 RF Power Field Effect Transistors
Freescale Semiconductor, Inc
MRF5S21150S MRF5S21150SR3 MRF5S21150 MRF5S21150R3 RF POWER FIELD EFFECT TRANSISTORS
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
MRF5S9101MBR1 MRF5S9101NBR1 MRF5S9101NR1 RF Power Field Effect Transistors
Freescale (Motorola)
 
 Related keyword From Full Text Search System
MRF19125 logic MRF19125 switching MRF19125 SePIC MRF19125 参数 封装 MRF19125 board
MRF19125 filetype:pdf MRF19125 download MRF19125 Gate MRF19125 level converter MRF19125 Series
 

 

Price & Availability of MRF19125

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.60096192359924